Abstract
High mobility Si/Si1-xGex/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300 cm2/V·s(293 K) and 7500 cm2/V·s(77 K) have been obtained for heterostructures with x = 0.3. The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.
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