Abstract
Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μH) of 50.1 cm2/Vs with a carrier concentration (N) of 2.55 × 1020 cm−3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μH of 38.7 cm2/Vs with an N of 2.22 × 1020 cm−3.
Highlights
We demonstrate a nanoscale material design to achieve high-Hall-mobility Al-doped ZnO (AZO) textured polycrystalline films with a well-defined (0001) orientation
In our previous work [5], we investigated the characteristics of AZO films deposited by direct current magnetron sputtering (DCMS), radio frequency (RF)-MS, and RF-superimposed DC-MS (RF/DC-MS) with a systematic variation of the power ratio of DC to RF to clarify key factors that determine the carrier transport
In this letter, we have reported the development of a two-step deposition process: (1) 10-nm-thick critical layer (CL) made from Ga-doped ZnO (GZO) films on glass substrates by ion plating (IP) with dc arc discharge and (2) subsequent deposition of 490-nmthick AZO films on the CLs by DC-MS
Summary
We demonstrate a nanoscale material design to achieve high-Hall-mobility Al-doped ZnO (AZO) textured polycrystalline films with a well-defined (0001) orientation. The key factor is to enhance intragrain carrier mobility together with a substantial reduction of the contribution of grain boundary (GB) scattering to carrier transport due to a high degree of c-axis alignment between columnar grains. In our previous work [5], we investigated the characteristics of AZO films deposited by direct current magnetron sputtering (DCMS), radio frequency (RF)-MS, and RF-superimposed DC-MS (RF/DC-MS) with a systematic variation of the power ratio of DC to RF to clarify key factors that determine the carrier transport. The AZO films deposited by DC-MS had a high carrier orientation by DC-MS
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