Abstract
A remarkably high growth rate of more than 1 Aå/cycle was obtained when using a new aminosilane precursor AHEAD{trade mark, serif} for atomic layer deposition of SiO2 thin films. The films were deposited at 150 - 300 {degree sign}C on 200 mm wafers. AHEAD{trade mark, serif} is a low vapour pressure liquid which was vaporised at 110 {degree sign}C. Ozone was used as the oxidizer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
