High growth rate deposition of oriented InN pillar crystals

Abstract

High growth rate deposition of highly oriented indium nitride (InN) pillar crystals were successfully grown on Si(100) substrate prepared under atmospheric pressure using a halide CVD method (AP-HCVD). The growth rate of InN pillar crystal can be enhanced threefold by AP-HCVD system with metal halide dual sources zone, and the maximum growth rate of 8.33 nm/s was achieved. X-ray diffraction and X-ray pole-figure analyses showed that the each InN pillar crystal grows with a different rotation angle around the 〈001〉 axis. Selected area transmission electron diffraction showed that that they are of high crystal quality.