Abstract
We report the thickness control of an arrayed waveguide using MOVPE selective area growth. The asymmetric mask pattern, in which a wide mask is placed next to one side of an arrayed waveguide, results in a gradient change of the thickness in array waveguides. The growth enhancement factor in the arrayed waveguide depends on the growth condition, such as growth temperature and pressure. We also estimated the material compositions distribution in the arrayed waveguide from the difference between the photoluminescence and the bandgap calculated from the thickness. Moreover, we compared the growth enhancement factor when the mask pattern had no arrayed waveguide.
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