Abstract
High general and special color rendering index (CRI) together with gamut area index (GAI) is demanded for lighting source. In a tolerable Duv, an efficient warm white organic light-emitting device (WOLED) with a high CRI and GAI is developed by using a bipolar homojunction emitting layers, i.e., junction between different emitting layers with the same bipolar host material. At a low drive voltage of 4V, the WOLED shows a high luminance of 1594cd/m2 and a power efficiency of 12.95lm/W, and, it shows a high general CRI of 82, a special CRI R9 of 75, an average of R9 to R12 of 69 and a GAI of 95. Besides, the WOLED shows relative stable color coordinates due to the elimination of the charges accumulation at interface between different emitting layers. And the current efficiency roll-off of the WOLED is also reduced due to the balance of carrier injection and transport in emitting layers.
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