Abstract
Selectivity of different SiGe processes towards oxide and nitride has been studied on both: blanket and patterned Si wafers. Three different precursors: silane, dichlorosilane and disilane were used for SiGe growth. It was found that growth of SiGe with Ge content higher than 35% is intrinsically selective towards SiO2; SiGe with any Ge content, up to pure Ge, could not be grown selectively towards nitride; in order to get selectivity towards nitride an etching gas should be used and its amount in the gas phase decreases with the Ge content increase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
