Abstract
X‐band gain amplifiers, consisting of a symmetrically‐graded‐channel In0 425 Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC‐MHEMT) and a pseudomorphic‐channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC‐MHEMT), respectively, have been successfully investigated. The devised SGC‐MHEMT (PC‐MHEMT) amplifier circuit has demonstrated superior small‐signal gain of more than 15.7 (14.5) dB within the X‐band frequency regime. In addition, the SGC‐MHEMT amplifier also demonstrates superior gate‐voltage swing (GVS) characteristics as compared to the PC‐MHEMT amplifier. The improved tolerance for gate‐bias variations makes the proposed design suitable for high‐power and high‐linearity monolithic microwave integrated circuit (MMIC) applications.
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