Abstract
High gain GaAs photoconductive semiconductor switch offers many advantages for the pulsed power applications including beam accelerator, optically activated electrical fireset, electro-optic driver1–2. In view of the specific application considerations, it is required to replace the desktop laser system by laser diode (LD) sources, i.e., micro-joules excitation energy, which leads to the promise of extremely compact switching systems with low cost. Despite the favorable benefits, the operation mechanism of high gain mode under LD excitation has not been much investigated. At excitation of μJ laser energy, the bias electric field would be higher than that with excitation of mJ. The main factors affecting switch performance are mostly related to thermal effects, especially in limited space and specific ambient temperature.
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