Abstract
A multi-finger n-type Si/SiGe modulation-doped field-effect transistor fabricated on Si substrate for RF power amplification is demonstrated for the first time. Load-pull measurements performed at 2 GHz on a ten-finger device with a gate length of 0.3 µm and a gate width of 750 µm show a maximum output power of 14 dBm and power gain of 16 dB at 1 dB compression point with power added efficiency of 15%.
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