Abstract
A high-gain multistage image intensifier and microscope are used to study low-current dc electroluminescence in bulk semiconductors. A comparison is made with cathodoluminescence, and preliminary results for Ga1−xAlxAs and GaP are presented. It is shown how the technique gives information about the electrical contacts to a specimen, the electroluminescence spectra at points on a specimen, and the distribution of radiative recombination centers.
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