Abstract
The authors design and demonstrate an InGaAs∕InGaAsP quantum well infrared photodetector for high-speed infrared detection. The InGaAsP is selected as the barrier material to provide a large photoconductive gain, and the well is made of InGaAs∕InP superlattice to achieve a broadband absorption. These features are expected to increase the photocurrent of the detector under a broadband source. For quantitative comparison, we also fabricate a quantum well GaAs∕AlGaAs superlattice detector with a similar spectrum. Dark current noise measurement indicates that the gain of the InGaAs∕InGaAsP detector is 4.6 times larger than that of the reference detector, thus confirming the present design concept.
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