High-G Shock Reliability of 3-D Integrated Structure Microsystem Based on Finite Element Simulation

Abstract

In order to understand high-G shock reliability of the 3-D integrated structure microsystem (3-D-ISM), it is studied by the finite element method (FEM). First, a numerical model of the 3-D-ISM is established for simulation. Then, appropriate elements are used to discretize the geometry, and certain initial and boundary conditions are enforced. Acceleration up to 20000 G is applied to the high-G shock simulation process. The simulation results showed that the filler can significantly improve the high-G shock reliability of the 3-D-ISM. And by filling with the filler, the 3-D-ISM under different loading types and different substrates can meet the strength requirement after being subjected to the high-G shock. This study could provide reliability prediction for the designed 3-D-ISM.