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Abstract
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both the thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy and the magnetization damping are determined by analyzing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled the excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modeling is used to analyze the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
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