Abstract
The time-dependent dielectric breakdown of thin oxides (8.6-11 nm) are compared under DC, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under DC conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field accelerations of breakdown time are similar for DC and pulse stressing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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