Abstract
A complete treatment of the thermal noise in a MOSFET including both drain current noise and induced gate current noise has been developed by deriving a small-signal model valid at high frequencies and for short-channel devices. On the basis of this model the parameters currently used for the representation of a noisy two-port have been derived. As those parameters depend on the noise sources and on the admittance matrix terms, both these contributions have been accurately modeled. Finally, the model has been applied to the derivation of MOSFET two-port noise parameters in order to minimize noise figure of low noise amplifiers.
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