Abstract
AbstractThe aggressive downscaling of CMOS technologies offers record transit frequencies well above 100 GHz. Efficient RF circuit design, employing such technologies, demands non‐linear, scalable compact models with high accuracy up to high frequencies. EKV3 is an advanced MOSFET model, based on charge sheet theory, that meets such demands. Within this paper, the model is validated against DC and RF measurements up to 30 GHz, for various devices of a modern 180 nm CMOS technology. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
