High-frequency reactive diode sputtering of magnetite films on the sapphire surface

Abstract

The conditions (oxygen partial pressure and growth rate) for the deposition of magnetite (iron oxide) Fe3O4 on the r plane of the single-crystalline sapphire using the high-frequency reactive diode sputtering of the Fe target are determined. The resulting ferromagnetic layers exhibit polycrystalline structure with a typical block size of 100–200 nm. The X-ray analysis is used to demonstrate that the textured phase of magnetite that is normally oriented with respect to the substrate dominates in the blocks and Fe and Fe2O3 impurities are almost absent.