Abstract
Pulse switching characteristics of newly developed 3.3 kV SiC-MOSFET were investigated and they were provided for a prototype switching power supply (SPS). With supply voltage of 2.5 kV and the load resistor of 100 Ω, rise time Tr and fall time Tf were 76 ns and 88 ns respectively. The SPS exhibited a successful 2.5 kV-20 A-1 MHz burst mode operation.
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