Abstract
A novel high-density, high-frequency power MOSFET structure fabricated using selectively deposited LPCVD tungsten on gate polysilicon and source contact regions is reported. The gate-to-source isolation was provided by anisotropically etched phosphosilicate glass (PSG) spacers. Using this technology we have successfully fabricated 30 V power DMOSFETs with excellent high-frequency switching performance in terms of low specific on-state resistance Rsp = 0.5 mΩcm2, low specific input capacitance Csf = 43nF/cm2, and high switching speed: ton and toff < 2 ns. These results represent the first successful demonstration of complex device structures fabricated using LPCVD tungsten derived process technology.
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