Abstract
Approximate expressions are derived for (a) the critical frequency above which the ideal transistor is unconditionally stable, and (b) the resulting maximum available gain, for the common-emitter configuration. These involve the internal cut-off frequency, the low-frequency emitter input conductance, the ohmic base resistance and the emitter and collector depletion-layer capacitances.
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Schedule a callMore From: Proceedings of the IEE - Part B: Electronic and Communication Engineering
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