Abstract

Circuit design techniques for realizing high-frequency, low-power phase-locked loops (PLLs) in monolithic silicon bipolar technology are discussed. A varactor-tuned voltage-controlled oscillator (VCO), an analog phase detector, and a bandgap reference have been utilized as building blocks. A test circuit fabricated in a 2- mu m bipolar process exhibited a maximum center frequency of 350 MHz, and the PLL pull-in range was larger than +or-1%. The circuit operates from a 5-V supply and dissipates 270 mW. >

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