Abstract
The high-speed performance of InGaAs interdigitated metal-semiconductor-metal (M-S-M) photodetectors illuminated with 1.55 and 1.3 μm wavelength radiation is modeled using a two-dimensional transit time calculation. Excellent agreement is found with the experimental pulse response of detectors with interdigital spacings of 2 and 3 μm. We study the dependence of the bandwidth on the device dimensions, and also examine the quantum efficiency. The results should aid the design of InGaAs M-S-M detectors with the optimum combination of bandwidth and efficiency for a given application.
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