Abstract
An erratum is presented to correct for a typo in the appendix of the original article.
Highlights
The interaction between light and mechanical motion is at the core of a field of research, optomechanics, which has been rapidly growing lately [1, 2]
gallium arsenide (GaAs) presents a series of assets for optomechanics applications: a strong photoelasticity [13], a surface dissipation that can be controlled by proper treatments [14], and a lattice matching with the family of aluminium and indium-rich GaAs ternary compounds
The best optical and mechanical quality factor measured on optomechanical disk resonators of this work are listed in Table 2, and compared with previously published results on GaAs disk resonators
Summary
The interaction between light and mechanical motion is at the core of a field of research, optomechanics, which has been rapidly growing lately [1, 2]. GaAs presents a series of assets for optomechanics applications: a strong photoelasticity [13], a surface dissipation that can be controlled by proper treatments [14], and a lattice matching with the family of aluminium and indium-rich GaAs ternary compounds. The latter fact permits the production of heteroepitaxial materials with designed photon/phonon interactions, based for example on quantum wells [15]. We investigate alternative III-V semiconductors that possess optomechanical assets similar to those of GaAs: the ternary compounds indium gallium phosphide (In0.5Ga0.5P) and aluminium gallium arsenide (Al0.4Ga0.6As). A complete set of optomechanical measurements on both families of resonators is presented along with a study of their dynamical behaviour under illumination
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