Abstract
The high-frequency operation of a lateral hot-electron transistor (LHET) with near ballistic transport in the base and collector is considered. The high-frequency efficiency of the hot-electron transport in the base and collector are evaluated. It is shown that due to two-dimensional electron gas the high-frequency properties of the LHET collector are quite different from the properties of the hot-electron transistors with vertical structure.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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