High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

Abstract

The noise characteristics of today’s short-channel devices are shown to have a better resemblance to ballistic devices than to long-channel metal oxide semiconductor field effect transistors (MOSFETs). Therefore the noise characteristics of these devices are best modeled using a ballistic-MOSFET-based noise model. Extensive hydrodynamic device simulations are presented in support of this hypothesis and a simple compact model is introduced. This model is used for predicting the noise behavior of future nanoscale devices. Most of the findings of this work can also be applied to carbon nanotubes and nanowires because of their similarities to MOSFETs.