Abstract
The authors have measured the small-signal frequency response characteristics of a GaAs VCSEL (λ = 835 nm) implementing a novel MOVPE-grown AlOaAs/AlAs-TiO2/SiO2 hybrid distributed Bragg reflector used to control emission to a single mode. A small-signal 3 dB bandwidth of 12.1 GHz was recorded at a bias level of only 2.8 mA. A very high modulation efficiency of 9.5 GHz/√(mA) was measured which is the highest reported for VCSELs or any semiconductor laser of any variety. In addition, large signal measurements were conducted which showed open eye patterns with pre-bias currents of ~0 mA demonstrating the possibility of direct logic-level drive.
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