Abstract

We report the magnetization, magnetic field dependence of direct current magnetoresistance (dc MR) and alternating current magnetoresistance (ac MR) in La1-xSrxMnO3 (x = 0.12, 0.18, and 0.20) in the frequency range f= 30 MHz to 3000 MHz, at room temperature. The ac MR is negative in all three compositions and shows a dramatic increase in magnitude compared to the dc MR when f = 30 MHz and in a magnetic field H = ±3 kOe. With increasing frequency of current, the sign of ac MR at 3 kOe progressively changes from negative to positive in all these samples which is initiated by appearance of two peaks at H = ±Hr. Line shape analysis of the data indicate that Hr increases linearly with f in x = 0.12 and 0.18. We attribute the two peak behavior at high frequencies to electron paramagnetic resonance in x = 0.12 and 0.18 samples. From the analysis, we obtain the gyromagnetic ratio γ/2π = 2.428 MHz/Oe and 2.690 MHz/Oe for x = 0.18 and 0.12 respectively. The smaller value of γ/2π in x = 0.18 possibly reflects short-range correlations among Mn-spins in the paramagnetic state.

Highlights

  • Instead of using a resonant cavity, we studied magnetoresistance in La1-xSrxMnO3 samples (x = 0.20, 0.18, 0.12) by passing alternating current of frequencies from f =30 MHz to 3000 MHz directly through the samples and measured their magnetoresistance using a radio-frequency impedance analyzer

  • High-frequency resistance of these samples in the frequency range f = 30 MHz to 3 GHz was measured at room temperature using a single port Agilent E4991A rf impedance analyzer

  • One end of the sample was connected to the signal line of the probe through which rf current was injected into the sample while the other end was connected to the ground plane using silver paint

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Summary

Introduction

Lofland et al.7 studied electron spin resonance in single crystals La1-xSrxMnO3 (x= 0.1, 0.2, and 0.3) above the ferromagnetic transition using a cavity resonance spectrometer operating at a fixed microwave frequency (f = 9.8 GHz). High-frequency resistance of these samples in the frequency range f = 30 MHz to 3 GHz was measured at room temperature using a single port Agilent E4991A rf impedance analyzer.

Results
Conclusion

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