High frequency impedance spectroscopy study on Gd-doped CeO2 thin films

Abstract

The gadolinia-doped ceria (GDC) thin films were deposited by pulsed laser deposition. Samples with special geometry were prepared which allowed us to characterize GDC film in across-plane direction. The electrical properties of the films were investigated by means of impedance spectroscopy in the frequency range of 10 Hz to 10 GHz and 380–600 K temperature interval. The data analysis was performed by using appropriate equivalent circuit. The equivalent circuit modeled thin GDC film itself, platinum metal connections (traces) in the dielectric medium of sapphire substrate and interfaces between the film and platinum electrodes. Hence, several factors influenced the impedance spectra, namely the properties of substrate, the oxygen-ion transport in the film, ion blocking at the interface between the film and the electrode, and metal traces. The electrical properties of GDC thin films were compared with these of bulk ceramics and showed similar conductivity and dielectric permittivity values. The study also revealed that measurement data at electrical field frequencies of up to 10 GHz were particularly important to correctly estimate electrical properties of GDC thin films, because at high temperatures the electric response of GDC film shifts to high frequencies (higher than 1 MHz at 600 K). The thin film sample preparation for high frequency measurements and fitting of impedance data by using relatively simple equivalent circuit model is presented.