Abstract
InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 $\mu \text{m}$ and a −3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 $\mu \text{m}$ diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance.
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