Abstract
Distortion in double-diffused MOS transistors (DMOS) at high frequencies is considered in this paper. A high-frequency model, including nonlinearities, is developed for lateral double-diffused transistors (LDMOS). A complete distortion analysis, based on this model and using the Volterra Series approach, is then presented. Analytical expressions for second- and third-order intermodulation distortions are also obtained. Good agreement between first-order theory and experiment is obtained.
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