Abstract
Oxides have successlally been grown on 4H-silicon carbide substrates by low temperature (<300°C) plasma oxidation. HFCV measurements on MOS capacitors show the devices to be stable, and capable of accumulation, depletion and inversion. The devices have a Dit of 2 × 1011eV-1cm-2, a Qf of 1.05 × 1012cm-2 and show negligible slow trapping effects.
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