Abstract
The use of direct capacitively coupled probes for performing the non-invasive measurement of integrated circuits operating at high frequencies is examined. The designed probes are fabricated by metalization of standard Si 3 N 4 scanning force microscope pyramidal tipped cantilevers so they measure the potential at a localized region of the circuit under test. Both topographical and electrical characterization can be performed with the same probe using this method. A numerical model is developed for determining the probe/test circuit coupling which allows the simulation of arbitrary probe and test circuit geometries including passivation effects. Experimental testing of the probe resolution is performed on a microstrip interconnect line.
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