Abstract
The high-frequency characteristics of a pseudojunction bipolar transistor (pseudo-HBT), which operates like an HBT despite a metallurgical homojunction utilizing a bandgap narrowing effect, are analyzed both theoretically and experimentally. Several design features used to achieve a high cutoff frequency at low temperatures are discussed. They include (1) a low-impurity-concentration graft base, (2) an abrupt base profile to obtain a large effective-bandgap difference between the base and the emitter, and (3) an inversely graded base profile, in which the impurity concentration increases from the emitter side to the collector side, to effectively reduce the base transit time. The pseudo-HBT with a low-concentration graft base shows a higher cutoff frequency below 100 K than at room temperature. These features are also appropriate for conventional bipolar transistors operating at low temperatures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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