High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric

Abstract

The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled. The used method for determining the changes of the energy bands bending on the surface of the spherical semiconductor particle by applying dc electric field allowed to calculate the changes of the dipole moment and effective (taking into account the polarization of the free charge) dielectric constant of this semiconductor particle. This result allowed to use the known models of the dielectric constant of two-component structures for the description of the capacitance field effect in the heterogeneous structures. The relations allowing to estimate the value of the bulk donor concentration in the semiconductor component of the matrix of the heterogeneous system and the statistical mixture have been obtained. The approbation of the obtained calculation relations to evaluate the donor concentration in the ZnO grains of zinc oxide varistor ceramics leads to the correct values that are consistent with estimates of other methods and models. It is established that the sensitivity of the relative dielectric constant to the applied dc electric field is dependent on the bulk fraction of the semiconductor particles in the heterogeneous structures. The bulk fraction of the semiconductor particles significantly affects on the dielectric constant beginning with the values from [Formula: see text] for matrix systems and [Formula: see text] for statistical mixtures.