High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP

Abstract

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59 GHz, and a maximum oscillation frequency of 68 GHz were obtained for a 5 × 15 µm2 self-aligned HBT. A minimum noise figure of 1.4–2.6 was measured in the frequency range of 2–18 GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials.