Abstract
It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to improve its third-order intercept point, but not its 1-dB compression point. High-frequency equations in Volterra series are used to explain this phenomenon. Analytical and experimental results show that the third-order intercept point increases with the capacitance within the low-frequency-trap network.
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