Abstract
This article presents a new approach to reduce the base resistance ( R B) and the base-collector capacitance ( C BC) for high f max AlGaAs/GaAs HBTs. An L-shaped base electrode self-aligned to the emitter and the base mesa was devised in order to suppress the increase of the metal resistance, when the external base region is narrowed to reduce C BC. The L-shaped base electrode does not need the emitter sidewall which prevents an emitter-base electrical shortening. The fabrication process is very simple and has good manufacturability. The d.c. and a.c. characteristics of the HBTs were measured in a 3 inch wafer. The performance, the yield and the uniformity are discussed. Further, a 50 GHz single-stage amplifier using the fabricated HBT is demonstrated. It is indicated that the HBTs with L-shaped base electrode combine the high performances with the good manufacturability.
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