Abstract
The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1 × 10 16–2.6 × 10 18 ions cm −2) keV Co metal vapour vacuum arc (MEVVA) irradiation has been investigated by scanning electron microscopy (SEM). The results show that for normal fluences up to ∼10 17 ions cm −2, the surface topography remains flat. As the fluence increases, pores develop and grow to form a columnar structure. At even higher fluences the columns are eroded to form an acicular structure. Deposition of a silicon dioxide or nitride layer on the Si surface leads to a significant suppression of the onset fluence for the formation of a rough surface. The porous surface could not be transformed to the network of acicular structures or a flat surface by high temperature annealing.
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