Abstract
MOS capacitors with 7 nm SiO 2 dielectrics and n-doped Si substrate were irradiated by 1.8 MeV protons with fluences ranging from 10 12 to 5 × 10 13 cm −2 which correspond to the typical LHC fluence range. No significant increase in gate oxide leakage current was detected. A decrease of the capacitance was observed in the accumulation regime. This effect is explained by an increase of the substrate resistivity caused by displacement damage.
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