Abstract
Monolithic infrared imagers with Schottky-barrier detectors (SBDs) can be constructed with silicon VLSI technology into large and high density focal plane arrays (FPAs). This paper presents a brief review of the available Pd2Si and PtSi SBDs, of the reported SBD FPAs, and of the general consideration for the construction of high fill-factor and high-density monolithic FPAs. The four FPA multiplexer architecture reviewed are: an interline transfer CCD, a charge sweep device, a column-readout MOS, and a row-readout MOS.
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