Abstract
Doping an element or more is widely used to regulate thermoelectric materials performance through adjusting electrical and thermal properties. In this work, a series of p-type Sb2(1+x)Te3 nanoflake composites are fabricated and tested. Excessive Sb in Sb2(1+x)Te3 causes high carrier density, which results in much larger electrical conductivity compared with that of pure Sb2Te3. The highest merit ZT of the Sb2.18Te3 composite reaches to 1.22 at 523 K, and the average ZT value in Sb2.18Te3 sample is above 1 obtained from 323 to 523 K, which is a decent ZT value at low–mid temperature zone for doped Sb2Te3-based composites. Self-doping element Sb into Sb2Te3 nanoflakes is an effective strategy that has a significant influence on improving power factor and keeping low thermal conductivity. Sb2(1+x)Te3 nanostructure composites are synthesized by reflux chemical method. Comparing with other methods involving solid solution melting, high-energy ball milling and solvothermal reaction, reflux chemical reaction method is not only a more facile, timesaving and green way to produce nanoscale materials but also can be applied to mass production.
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