Abstract
Present work demonstrates an efficient Waveguide coupled Surface Plasmon Resonance (WCSPR) based electro-optic (EO) modulator device utilizing Strontium Barium Niobate (SBN) films with enhanced figure of merit. Pulsed laser deposition (PLD) technique was employed to monitor the effect of incident laser fluence from 1.4Jcm-2 to 1.6Jcm-2 on the crystallographic property of Sr0.75Ba0.25Nb2O6(SBN75). For comparison Sr0.60Ba0.40Nb2O6(SBN60) thin film deposited under optimized conditions were also utilized for studying the characteristics of developed WCSPR-EO modulator. Enhancement in the resolution of the WCSPR-EO system from 1.61RIU-1 for SBN60 thin film to 0.59RIU-1 for SBN75 thin film has been obtained. Improved Figure of merit (FOM) with higher sensitivity of about 47.5° and maximum modulation index of 41.73% estimated for prism/air–gap/Au/SBN75/LSCO/Si (WCSPR-EO) modulator system which paves a way for potential application of SBN75 thin film for optoelectronic devices.
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