Abstract
Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in the integer QHE, fractional QHE and Wigner regimes. In the extreme quantum limit an intense, new spectral feature is observed to emerge for v< 1 5 , the temperature dependence of which is used to define two characteristic temperatures, T c1 and T c2. The boundary formed by the lower mapping, T c1, in the ( B, T)-plane correlates well with the electron liquid-solid transition established by other techniques.
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