Abstract
Ferroelectric polycrystalline lead germanate (Pb5Ge3O11, PGO) thin films were prepared by a dip-coating method in a sol-gel process. The optimum conditions for c-axis oriented films at a low process temperature were examined. The films were synthesized on glass substrates with sputtered ITO thin films. The c-axis oriented thin films were readily obtained by heating the coating solution. The dielectric constant of the thin films prepared from heated solution was twice as large as that of films prepared from non-heated solution. The c-axis orientation of the thin films was favored, and remanent polarization and coercive force of the films increased with increasing sintering temperature.
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