Abstract
Measurements of the anisotropy δ (T) = (Hc2[100]−Hc2[110])/H̄c2 of single-crystal V3Si are presented which show that δ (T) is small and essentially temperature independent for a variety of crystals with residual resistance ratios from 17 to 60. The effects of δ on flux pinning in V3Si is much smaller than estimated earlier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
