Abstract
Measurements of the anisotropy δ (T) = (Hc2[100]−Hc2[110])/H̄c2 of single-crystal V3Si are presented which show that δ (T) is small and essentially temperature independent for a variety of crystals with residual resistance ratios from 17 to 60. The effects of δ on flux pinning in V3Si is much smaller than estimated earlier.
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