Abstract

We present results of experimental studies of magnetic properties, resistivity and magnetoresistance (MR) of (Co84Nb14Ta2)x(Al2O3)100-x films deposited onto a glass-ceramic substrate by the ion-beam sputtering, focusing on MR in high magnetic fields for compositions close to the percolation threshold (x=47-57 at.%). The samples consist on Co-Nb-Ta metallic nanogranules size of 2-5 nm which are embedded into the non-stoichiometric Al-O matrix. Magnetization was measured by SQUID magnetometer at T=4.2-350 K. MR was studied in the pulsed magnetic fields μ0H up to 20 T at T=70-300 K in three geometries: magnetic field in plane parallel and perpendicular to current, magnetic field perpendicular to plane. The pulse duration was 11-12 ms. For the sample with x=57 at.% the temperature dependence of conductivity follows the lnT behavior that matches a strong tunnel coupling between nanogranules. With decreasing metal volume fraction lnT behavior gradually changes to the T1/2 dependence at 47 at.%. For all samples MR is small (<1%) and negative. For x<57 at.% it is slightly anisotropic at μ0H<1.0 T and almost saturates with increasing magnetic field. There is an evidence of small positive contribution to MR at μ0H=20T. Accordingly to structural and magnetic data a large amount of metallic atoms are located between magnetic nanogranules that diminish the tunnel barrier height and make tunnel MR small and weakly dependent on temperature.

Highlights

  • Recent discovery of memristor effect in metalinsulator nanostructures, in particular in those based on non-stoichiometric oxides AlOz (z

  • In the case of (CoFeB)x (Al-O)1-x nanogranular thin films with metal content x=49-56 at.% it was found a large number of Co, Fe and B atoms dispersed in Al-O matrix [3], logarithmic temperature dependence of conductivity [3, 4] and tunnel anomalous Hall effect [3]

  • The granular size about 2-5 nm and presence of isolated magnetic atoms in matrix requires for saturation of magnetization the use of high magnetic fields in MR measurements

Read more

Summary

Introduction

Recent discovery of memristor effect in metalinsulator nanostructures, in particular in those based on non-stoichiometric oxides AlOz (z

Experiment
Magnetization
Negative magnetoresistance
Positive magnetoresistance
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call