Abstract
The magnetoresistance and the de Haas-van Alphen (dHvA) effect in CeSn 3 have been measured in the field up to 150 kOe and at temperature down to 0.45 K. The magnetoresistance does not show a tendency to saturate in all field directions. This result claims that CeSn 3 is a compensated metal with an equal carrier concentration of electrons and holes, and electron and hole Fermi surfaces possess no open orbits. In contrast to an uncompensated metal LaSn 3 , the 4 f electrons in CeSn 3 become itinerant electrons. This is consistent with the dHvA data which are almost explained by the modified Fermi surface model based on the result of band calculation where the 4 f electrons are treated the same as the usual s , p , d conduction electrons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
