Abstract
We report electric-field control of ferromagnetic resonance in NiFe film, which was deposited on (011)-cut 0.3Pb(In1/2Nb1/2)O3-0.4Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PIN-PMN-PT) single crystals. An upward frequency shift from 11.69 to 12.53 GHz is achieved in our heterostructures for electric field from 0 to 15 kV/cm as an external magnetic field of 2090 Oe was applied along in-plane [100] direction, and a downward shift from 13.61 to 13.25 GHz is investigated for electric field from 0 to 7 kV/cm, while an external magnetic field of 2723 Oe was applied along [01$$\stackrel{-}{1}$$] direction. The large operational electric field and the high rhombohedral-tetragonal phase transition temperature TR−T (~ 127 °C) of the crystal make NiFe/PIN-PMN-PT composites great candidates for electrically tunable microwave magnetic device applications with broad electric field and temperature range.
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