Abstract
Electrical breakdown of thin silicon oxide layers subject to high electric field during constant current injection is studied. The correlation between charge-to-breakdown and electron trap generated inside of the oxides during electron injection is verified. This correlation is described in terms of oxide thickness and field dependencies observed during thin oxide breakdown.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
